| PART |
Description |
Maker |
| JDP2S01S |
UHF~VHF Band RF Attenuator Applications 甚高频波段超高频射频衰减器的应用
Diode Silicon Epitaxial Pin Type UHF~VHF Band RF Attenuator Applications
|
Toshiba, Corp.
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| 1SV237 |
Diode Silicon Epitaxial Pin Type VHF~UHF Band RF Attenuator Applications
|
TOSHIBA
|
| 2SA2061 |
Transistor Silicon PNP Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
|
TOSHIBA
|
| 2SJ106 E001251 |
From old datasheet system
AUDIO FREQUENCY AMPLIFIER APPLICATIONS ANALOG SWITCH APPLICATIONS CONSTANT CURRENT APPLICATIONS IMPEDANCE CONVERTER APPLICATIONS
P CHANNEL JUNCTION TYPE (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| 2SC5755 |
Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
From old datasheet system
|
Toshiba Semiconductor
|
| 2SK982 |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications Interface Applications
|
TOSHIBA
|
| TPC8109 |
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
|
TOSHIBA
|
| 1SV23707 |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| 1SV172TE85LF |
VHF~UHF Band RF Attenuator Applications
|
Toshiba Semiconductor
|
| R414720000 |
ATTENUATOR, N 2W 20DB 12.4GHZATTENUATOR, N 2W 20DB 12.4GHZ; Impedance:50R; Attenuation:20dB; Connector type:N; Frequency, operating max:12.4GHz; Power rating:2W 0 MHz - 12400 MHz RF/MICROWAVE FIXED ATTENUATOR
|
Radiall S.A.
|
| 2SC5548A |
Transistor Silicon NPN Triple Diffused Type High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
|
TOSHIBA
|
